Search results for "electron-phonon interaction"
showing 8 items of 8 documents
Electron-phonon heat transport and electronic thermal conductivity in heavily doped silicon-on-insulator film
2003
Electron–phonon interaction and electronic thermal conductivity have been investigated in heavily doped silicon at subKelvin temperatures. The heat flow between electron and phonon systems is found to be proportional to T6. Utilization of a superconductor–semiconductor–superconductor thermometer enables a precise measurement of electron and substrate temperatures. The electronic thermal conductivity is consistent with the Wiedemann–Franz law. Peer reviewed
Intervalley-scattering-induced electron-phonon energy relaxation in many-valley semiconductors at low temperatures
2005
We report on the effect of elastic intervalley scattering on the energy transport between electrons and phonons in many-valley semiconductors. We derive a general expression for the electron-phonon energy flow rate at the limit where elastic intervalley scattering dominates over diffusion. Electron heating experiments on heavily doped n-type Si samples with electron concentration in the range $3.5-16.0\times 10^{25}$ m$^{-3}$ are performed at sub-1 K temperatures. We find a good agreement between the theory and the experiment.
Recombination processes in unintentionally doped GaTe single crystals
2002
Emission spectra of GaTe single crystals in the range of 1.90–1.38 eV have been analyzed at different temperatures and excitation intensities by photoluminescence, photoluminescence excitation, and selective photoluminescence. A decrease in band gap energy with an increase in temperature was obtained from the redshift of the free exciton recombination peak. The energy of longitudinal optical phonons was found to be 14±1 meV. A value of 1.796±0.001 eV for the band gap at 10 K was determined, and the bound exciton energy was found to be 18±0.3 meV. The activation energy of the thermal quenching of the main recombination peaks and of the ones relating to the ionization energy of impurities and…
ELECTRON SPIN RELAXATION PROCESS IN SILICON CRYSTALS
2014
Recently, electrical injection of spin polarization in n-type and p-type silicon has been experimentally carried out up to room-temperature. Despite of these preliminary but promising experimental results, a comprehensive theoretical framework concerning the influence of transport conditions on the phonon-induced spin depolarization process in silicon structures, in a wide range of values of temperature, doping concentration and amplitude of external fields, is still in a developing stage. In order to elucidate the electron transport and spin dynamics of conduction electrons in lightly doped n-type Si crystals we have performed semiclassical multiparticle Monte Carlo simulations and numeric…
Monte Carlo Simulation of Spin Relaxation of Conduction Electrons in Silicon
2014
Recently, electrical injection of spin polarization in n-type and p-type silicon up to room-temperature has been experimental- ly carried out. Despite of these promising experimental results, a comprehensive theoretical framework concerning the influence of transport conditions on the spin depolarization process in silicon structures, in a wide range of values of temperature, doping concentration and amplitude of external fields, is still in a developing stage. In this contribution we use a semiclassical multiparti- cle Monte Carlo approach to simulate the electron transport and spin dynamics in lightly doped n-type Si crystals and numerically calculate the spin lifetimes of drifting electr…
Many-body Green's function theory for electron-phonon interactions: ground state properties of the Holstein dimer
2015
We study ground-state properties of a two-site, two-electron Holstein model describing two molecules coupled indirectly via electron-phonon interaction by using both exact diagonalization and self-consistent diagrammatic many-body perturbation theory. The Hartree and self-consistent Born approximations used in the present work are studied at different levels of self-consistency. The governing equations are shown to exhibit multiple solutions when the electron-phonon interaction is sufficiently strong whereas at smaller interactions only a single solution is found. The additional solutions at larger electron-phonon couplings correspond to symmetry-broken states with inhomogeneous electron de…
Application of time-dependent many-body perturbation theory to excitation spectra of selected finite model systems
2016
In this thesis, an approximate method introduced to solve time-dependent many-body problems known as time-dependent many-body perturbation theory is studied. Many-body perturbation theory for interacting electrons and phonons is reviewed. In particular, the electron propagator G and an unconventional two-component phonon propagator, which satisfy coupled integral Dyson equations, are introduced. In practice, the associated integral kernels known as the electron Σ and phonon self-energies need to be approximated. The conserving approximations known as the Hartree (-Fock) and the first and second Born approximations, which respect the continuity equation between the electron density and curren…
Electron-phonon interaction in flat-band superconductivity
2017
Parhaiten tunnettu suprajohtavuuden syntymekanismi perustuu fononien välittämään vetovoimaan elektronien välillä. Tässä tutkielmassa tutkin fononien välittämää suprajohtavuutta systeemeissä, jossa elektronivyöt ovat tasomaisia. Tasovyöllä elektronien dispersio on erittäin heikko, jolloin tilatiheys on tavanomaista suurempi. Tämän takia suprajohtavuus tasovyöllä on tavanomaista voimakkaampi silloin kun elektronien välinen vetovoima on heikko. Eliashbergin teoria on elektroni–fononi-suprajohtavuuden teoria, joka ottaa luonnollisella tavalla fononien äärellisen nopeuden huomioon elektronien välisessä vuorovaikutuksessa. Pohjustuksena tasovyösuprajohtavuuteen perehdyn Eliashbergin teoriaan ensi…